| PART |
Description |
Maker |
| TC2998E |
2.5-2.7GHz 20W Packaged GaAs Power FETs
|
Transcom, Inc.
|
| RFRX1701PCBA-410 RFRX1701S2 RFRX1701SB RFRX1701SQ |
GaAs MMIC IQ Downconverter 17.7GHz to 26.5GHz
|
RF Micro Devices
|
| MGFC39V7177A |
7.1-7.7GHz BAND 8W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V7177A |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET 7.1 - 7.7GHz波段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFX36V0717 X360717 |
10.7 - 11.7GHz BAND 4W INTERNALLY MATCHD GaAs FET 10.7 - 11.7GHz频段4瓦国内MATCHD砷化镓场效应
From old datasheet system
|
Rohm Co., Ltd.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| XL1007-QT-EV1 XL1007-QT-0G0T XL1007-QT-0G00 |
3.5-8.0 GHz GaAs MMIC Packaged Low Noise Amplifier
|
Mimix Broadband, Inc.
MIMIX BROADBAND INC
|
| TC2571 |
1W Low-Cost Packaged PHEMT GaAs Power FETs
|
ETC[ETC]
|
| TC2997D |
2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
|
Transcom, Inc.
|
| TC2997C |
2.1 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
|
Transcom, Inc.
|
